Auger Electron Spectroscopy (AES), also known as Scanning Auger Microscopy (SAM), is a surface analytical technique that provides information about the chemical composition of surfaces and interfaces. AES uses an incident electron beam to excite a solid resulting in the emission of electrons known as Auger electrons. An energy analysis of these Auger electrons provides the analytical information for this technique. The principle advantages of AES are excellent surface sensitivity (< ~20 Å depth) and high spatial resolution (< 1 µm). AES can be used for determining the composition of a surface, mapping the spatial distribution of the surface constituents, and obtaining a depth profile of these constituents into the bulk of the material.

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Survey scan - Identifies the elemental composition of the uppermost (< 20 Å) of the analyzed surface.

Multiplex scan - Measures the atomic concentration of the elements identified in the survey scans. Detection limits are approximately 0.1 atom percent for most elements.

Mapping - Measures the lateral distribution of elements on the surface. Spatial resolution is approximately 0.3 µm.

Depth profile - Measures the distribution of elements as a function of depth into the sample. Material is removed from the surface by sputtering with an energetic ion beam. Depth resolution is dependent upon sample and sputtering parameters (< 100 Å resolution is possible).

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• Particle identification
• Passive oxide film thickness
• Contact pad contamination on integrated circuits
• Quantifying light element impurities
• Mapping spatial distribution of surface constituents

Model: PHI590 AM

Samples should be no larger than about 3/4 in. x 1/2 in. (18 mm x 12 mm). Height should not exceed 1/2 in. (12 mm). Sample must be conductive or area of interest must be grounded properly. Insulating samples including thick insulating films (>3000 Å) cannot be analyzed.

Samples must be compatible with high vacuum environment (<1x10-9 Torr).

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